Plasma dicing, using Deep Reactive Ion Etching (DRIE) processing, is gaining rapid acceptance within the semiconductor industry as a viable alternative to conventional singulation methods using saw blades or LASERs.
Plasma dicing offers considerable benefits to users
Up to 80% more die per wafer, at higher throughput
Up to 100% stronger die at higher yields
Flexibility for die layout and design.
Plasma dicing can be carried out before grinding, where deep dicing lanes are etched into the wafer and the die are singulated by a final backside grind operation, or after grind where DRIE is used to etch through thinned wafers mounted on taped frames, or carriers.
Plasma dicing is compatible with solder bumps and backside metal, and the Mosaic™ plasma dicing solution has successfully demonstrated “dicing after grind” on standard/thinned/TAIKO wafers and wafer pieces, on a range of dicing frames and tapes.
The Mosaic™ platform with Rapier-S process modules, is a new etch system, designed for plasma dicing in volume production.
Mosaic platform is based on the existing range of SPTS 300mm platforms for Omega, Sigma & Delta products.
Rapier-S is an evolution of the Rapier DRIE product line, bringing DRIE capability to framed substrates.
High throughputs are achieved with Rapier-S. The flexibility of the Bosch process provides ability to etch narrow, high aspect ratio lanes up to “full wafer thickness”.
SPTS’s patented Claritas™ end-point detection system, detects the point at which the etch first reaches the dicing tape. At end-point, the process can be modified to complete the die separation without causing lateral damage of the die sidewall at the silicon/tape interface. This control ensures that die strength is improved compared to existing singulation methods. Use of endpoint detection also protects the tape, ensuring that singulated die can be safely handled and the tape frame re-used.