Solid State Technology: "Advances in Back-Side etching of SiC for GaN"
May 16, 2016
Compared to GaAs the material properties of SiC and GaN make them much more challenging to plasma etch. Energetic plasma processes are required to deliver productive SiC etch rates whilst maintaining high enough selectivity to the masking layer and low enough wafer temperature to preserve the bonding and prevent de-lamination.
Authors: Anthony Barker et al. (SPTS Technologies) and Chia-Hao Chen et al. (WIN Semiconductors Corp)
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