A viable alternative to conventional singulation methods using saw blades or LASERs
Plasma dicing, using Deep Reactive Ion Etching (DRIE) processing, is gaining rapid acceptance within the semiconductor industry as a viable alternative to conventional singulation methods using saw blades or LASERs.
Plasma dicing offers considerable benefits to users
Up to 80% more die per wafer, at higher throughput
Up to 100% stronger die at higher yields
Flexibility for die layout and design.
Plasma dicing can be carried out before grinding, where deep dicing lanes are etched into the wafer and the die are singulated by a final backside grind operation, or after grind where DRIE is used to etch through thinned wafers mounted on taped frames, or carriers.
Plasma dicing is compatible with solder bumps and backside metal, and the Mosaic™ plasma dicing solution has successfully demonstrated “dicing after grind” on standard/thinned/TAIKO wafers and wafer pieces, on a range of dicing frames and tapes.
Related Product Information
Stronger die - more die. High yield plasma dicing solutions based on industry leading Deep Reactive Ion Etch (DRIE) technology for dice-before-grind and dice-after-grind.
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