Dry vapor etch utilising HF or XeF2 is used for the isotropic etch removal of sacrificial silicon or oxide layers to release flexures or other MEMS devices with enhanced selectivity and without stiction. This provides controlled, residue-free etching across a wide range of etch rates.
Key applications for vapor release technology include inertial sensors, mirror arrays, resonators, RF MEMS, micro-actuators and microphones.
Benefits of SPTS Dry Vapor Release
Low attack on a wide range of device and mask materials
Repeatable, stable performance with a wide process window
Compatible with a wide range of metals, especially unprotected aluminium (Al) mirrors and bond pads
No complex waste management issues, small footprint, no process consumables
Low cost of ownership compared with wet bench technology
Reduced pressure operation keeps etch by-products in the gas phase ensuring high selectivities to metals and maximum feature penetration
Related Product Information
Intro to HF Release Etch
HF etching is a dry vapour (plasma-less) etch process to remove sacrificial oxide layers, primarily used to release silicon MEMS structures.
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