Xactix® XeF2 Release Etch

Selective XeF2 vapor etch for removing sacrificial silicon layers

Isotropic etching of silicon using xenon difluoride is an ideal solution for releasing MEMS devices. XeF2 shows high selectivity to silicon over almost all standard semiconductor materials including photoresist, silicon dioxide, silicon nitride and aluminum. Being a vapor phase etchant, XeF2 avoids many of the problems typically associated with wet or plasma etch processes.

SPTS offers a range of systems ranging from the table-top e2 for R&D, to the CVE module for integration into a volume production cluster system.

Xactix® e2

Xactix® e2

The Xactix® e2 is an ideal solution for those seeking a low cost, table-top R&D xenon difluoride etching system. Key to successful research is...

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Xactix® X4 Series™

Xactix® X4 Series™

The accelerated etch rates and superior components make the Xactix® X4 ideal for intensive R&D and pilot production. It is the leading XeF2 etch...

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Xactix® CVE

Xactix® CVE

The CVE module is compatible with SPTS' cluster platforms, and has a unique chamber design which provides high etch rates, uniformity and efficiency....

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