Key to successful research is process flexibility and...
Xactix® XeF2 Release Etch
Selective XeF2 vapor etch for removing sacrificial silicon layers
Isotropic etching of silicon using xenon difluoride is an ideal solution for releasing MEMS devices. XeF2 shows high selectivity to silicon over almost all standard semiconductor materials including photoresist, silicon dioxide, silicon nitride and aluminum. Being a vapor phase etchant, XeF2 avoids many of the problems typically associated with wet or plasma etch processes.
SPTS offers a range of systems ranging from the table-top e2 for R&D, to the CVE module for integration into a volume production cluster system.