III-V device fabrication requires a range of processes including pre-etching of substrates, etching of nitrides, polyimide, BCB and the epitaxial layers on the wafer front-side, along with via etches from the wafer back-side.
These etch processes are available on either the ICP or Synapse™ process modules.
Benefits of SPTS's ICP for Compound Semiconductor RF-IC
Large installed base
8 out of the top 10 compound makers
4 out of the top 5 compound foundries
ESC compatible with sapphire carriers without the need for a back-coat
Range of dielectric etches including low damage processes and thick organic films
High rate GaAs back-side via etching
Benefits of SPTS's Synapse™ for Compound Semiconductor RF-IC
Extendibility to strongly bonded films such as SiC
Highest rate SiC etching for maximum productivity
Wafer clamping adapted for ‘dirty’ SiC processing environment
Related Product Information
Plasma Processes for Compound Semiconductors
Overview of the plasma processing technologies which SPTS offers for a variety of Compound Semiconductor applications such as RF, Power and Opto-electronic device manufacturing.
SiC is a wide bandgap material used in power applications and GaN-on-SiC RF devices. It is very difficult to etch but SPTS' Synapse etch system can provide etch rates 2-4x faster than conventional ICP etching.
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